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IXTT02N450HV Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTT02N450HV
Description  High Voltage Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTT02N450HV Datasheet(HTML) 1 Page - IXYS Corporation

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© 2012 IXYS CORPORATION, All Rights Reserved
DS100498(10/12)
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Features
High Blocking Voltage
High Voltage Packages
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
IXTA02N450HV
IXTT02N450HV
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
4500
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
4500
V
V
GSS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
200
mA
I
DM
T
C = 25°C, Pulse Width Limited by TJM
600
mA
P
D
T
C = 25°C
113
W
T
J
- 55 ... +150
°C
T
JM
150
°C
T
stg
- 55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10 seconds
260
°C
F
C
Mounting Force (TO-263)
10..65 / 22..14.6
N/lb
Weight
TO-263
2.5
g
TO-268
4.0
g
V
DSS
= 4500V
I
D25
= 200mA
R
DS(on)
≤≤≤≤≤ 750
Ω
Ω
Ω
Ω
Ω
Advance Technical Information
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
GS(th)
V
DS = VGS, ID = 250μA
4.0
6.5
V
I
GSS
V
GS = ±20V, VDS = 0V
±100 nA
I
DSS
V
DS = 3.6kV, VGS = 0V
5
μA
V
DS = 4.5kV
10 μA
V
DS = 3.6kV
T
J = 100°C
25
μA
R
DS(on)
V
GS = 10V, ID = 10mA, Note 1
750
Ω
G = Gate
D
= Drain
S = Source
Tab = Drain
TO-268 (IXTT)
G
D (Tab)
G
S
TO-263 (IXTA)
D (Tab)
S


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