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IXTL2N450 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTL2N450 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTL2N450 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 60V, ID = 0.5 • ID25, Note 1 1.3 2.2 S C iss 6900 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 264 pF C rss 88 pF R Gi Integrated Gate Input Resistance 3.0 Ω t d(on) 44 ns t r 38 ns t d(off) 100 ns t f 205 ns Q g(on) 156 nC Q gs V GS = 10V, VDS = 1kV, ID = 0.5 • ID25 38 nC Q gd 67 nC R thJC 0.56 °C/W R thCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 2 A I SM Repetitive, Pulse Width Limited by T JM 8 A V SD I F = IS, VGS = 0V, Note 1 3 V t rr I F = 2A, -di/dt = 100A/μs, VR = 100V 1.75 μs ISOPLUS i5-PakTM (IXTL) Outline 1 = Gate 2 = Source 3 = Drain 4 = Isolated SYM INCHES MILLIMETER MIN MAX MIN MAX A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC 3.81 BSC e1 0.450 BSC 11.43 BSC L 0.780 0.820 19.81 20.83 L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Idss measurement. Resistive Switching Times V GS = 10V, VDS = 1kV, ID = 1A R G = 0Ω (External) PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
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