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LT8697 Datasheet(PDF) 3 Page - Linear Dimensions Semiconductor

Part No. LT8697
Description  USB 5V 2.5A Output, 42V Input Synchronous Buck with Cable Drop Compensation
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Maker  LINEAR_DIMENSIONS [Linear Dimensions Semiconductor]
Homepage  http://www.lineardimensions.com
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LT8697 Datasheet(HTML) 3 Page - Linear Dimensions Semiconductor

 
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LT8697
3
8697p
For more information www.linear.com/LT8697
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Notes 2, 4)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
USB5V Current
 
VISN = 5V, VISP – VISN = 40mV, RCBL = 13.7k
VISN = 5V, VISP – VISN = 10mV, RCBL = 13.7k
VISN = 5V, VISP – VISN = 0V, RCBL = 13.7k
RCBL = Open
l
l
l
l
58
12
0
0
60
15
2
1
62
23
8
2
µA
µA
µA
µA
Current Sense Voltage (VISP – VISN)
VCTRL = 1.5V, VISN = 5V
VCTRL = 1.5V, VISN = 0V
VCTRL = 800mV, VISN = 5V
VCTRL = 800mV, VISN = 0V
VCTRL = 200mV, VISN = 5V
VCTRL = 200mV, VISN = 0V
l
l
l
l
l
l
45.5
44.5
37.5
36
6
5
48
48.5
39.5
40
9.5
10
50
53
42
44.5
13
15
mV
mV
mV
mV
mV
mV
RCBL Monitor Voltage
VISP – VISN = 40mV, RCBL = 13.7k
VISP – VISN = 10mV, RCBL = 13.7k
l
l
720
130
800
205
880
280
mV
mV
RCBL Output Current Limit
VISP – VISN = 50mV, VRCBL = 0V
–2
–3
–4
mA
ISP, ISN Bias Current
VISP = VISN = 0V, 5V
–20
20
µA
ICTRL Current
VICTRL = 1.5V
–0.5
–2
–3
µA
INTVCC Voltage
VSYS = 0V, 5V
3.4
V
INTVCC Undervoltage Lockout
2.6
2.9
3.15
V
SYS Voltage
VIN = 12V
l
5.63
5.8
5.92
V
SYS Voltage to Disable Forced Continuous Mode
7.5
V
SYS Current in Regulation
VSYS = 5V, RT = 56.2k
l
3
4
5
mA
Dropout Voltage (VIN – VSYS)
VSYS = 5V, ILOAD = 2.1A
450
mV
Maximum Duty Cycle in Dropout
96
97.5
99
%
Minimum On-Time
ILOAD = 1A
l
30
45
70
ns
Minimum Off-Time
ILOAD = 0.5A
50
80
110
ns
Minimum VIN for SYS Regulation at Full Frequency RT = 16.5k, VUSB5V = 0V, ILOAD = 0.5A
l
6.2
7
7.9
V
Oscillator Frequency
RT = 140k
RT = 56.2k
RT = 16.5k
l
l
l
250
620
1.9
300
700
2.00
340
750
2.05
kHz
kHz
MHz
Top Power NMOS On-Resistance
ISW = 1A
120
Top Power NMOS Current Limit
l
3.2
4.8
6
A
Bottom Power NMOS On-Resistance
VINTVCC = 3.4V, ISW = 1A
65
Bottom Power NMOS Current Limit
VINTVCC = 3.4V
3.5
4.5
5.8
A
SW Leakage Current
VIN = 42V, VSW = 0V, 42V
0.1
5
µA
EN/UV Threshold
VEN/UV Rising
l
0.94
1.0
1.06
V
EN/UV Hysteresis
40
mV
EN/UV Bias Current
VEN/UV = 2V
–20 
20
nA
PG Upper Threshold Offset from VUSB5V
VUSB5V Falling
l
6
9
12
%
PG Lower Threshold Offset from VUSB5V
VUSB5V Rising
l
–6
–9
–12
%
PG Hysteresis
1.3
%
PG Pull-Down Resistance
VPG = 0.1V
l
680
2000
Ω
PG Transition Delay
VUSB5V from 5V to 4V
40
µs
SYNC Threshold
VSYNC Falling
VSYNC Rising
0.8
1.6
1.1
2.0
1.4
2.4
V
V
SYNC Current
VSYNC = 2V
–40
40
nA
TR/SS Current
VTR/SS = 0V
–1.2
–2.2
–3.2
µA
TR/SS Pull-Down Resistance
Fault Condition, VTR/SS = 0.1V
230
Ω


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