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FQP2P40 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQP2P40 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2000 Fairchild Semiconductor International December 2000 Rev. A2, December 2000 QFET QFET QFET QFETTM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. Features • -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP2P40 Units VDSS Drain-Source Voltage -400 V ID Drain Current - Continuous (TC = 25°C) -2.0 A - Continuous (TC = 100°C) -1.27 A IDM Drain Current - Pulsed (Note 1) -8.0 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) -2.0 A EAR Repetitive Avalanche Energy (Note 1) 6.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns PD Power Dissipation (TC = 25°C) 63 W - Derate above 25°C 0.51 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.98 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W TO-220 FQP Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G |
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