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FERD30M45C Datasheet(PDF) 3 Page - STMicroelectronics

Part No. FERD30M45C
Description  ST advanced rectifier
Download  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD30M45C Datasheet(HTML) 3 Page - STMicroelectronics

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FERD30M45C
Characteristics
Doc ID 023771 Rev 1
3/8
To evaluate the conduction losses use the following equation:
P = 0.27 x IF(AV) + 0.012 IF
2
(RMS))
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
600
µA
Tj = 125 °C
25
50
mA
VF
(2)
Forward voltage drop
Tj = 125 °C
IF = 7.5 A
0.305
0.350
V
Tj = 125 °C
IF = 10 A
0.350
0.395
Tj = 25 °C
IF = 15 A
0.420
0.470
Tj = 125 °C
0.420
0.450
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%
Figure 1.
Average forward power dissipation
versus average forward current (per
diode)
Figure 2.
Average forward current versus
ambient temperature (
 = 0.5, per
diode)
0
2
4
6
8
10
12
0
2
4
6
8
101214
16
18
20
PF(AV)(W)
IF(AV)(A)
T
δ=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1.0
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
Tamb(°C)
IF(AV)(A)
T
δ=tp/T
tp
R
R
t
t
h
h
(
(
j
j
-
-
a
c
)
)
=
Figure 3.
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
Figure 4.
Forward voltage drop versus
forward current (per diode)
C(pF)
100
1000
10000
1
10
100
VR(V)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VFM(V)
I
FM(A)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)


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