T3035H-6T datasheet(4/9 Pages) STMICROELECTRONICS

Part #	T3035H-6T

Description	Snubberless high temperature 30 A Triacs

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4 / 9 page

Characteristics

T3035H T3050H

4/9

Doc ID 17029 Rev 4

Figure 3.

On-state rms current versus

ambient temperature

(free air convection)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

I

(A)

T(RMS)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

25

50

75

100

125

150

T (°C)

a

K = [Z / R ]

th

1.0E-02

1.0E-01

1.0E+00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

t (s)

p

Z

th(j-c)

Z

th(j-a)

Figure 5.

Relative variation of gate trigger

current and gate trigger voltage

versus junction temperature

Figure 6.

Relative variation of holding

current and latching current vs

junction temperature (typical value)

I , V [T ] / I , V [T = 25 °C]

GT

j

GT

j

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

0

25

50

75

100

125

150

IQ3

GT

I

Q1-Q2

GT

V

Q1-Q2-Q3

GT

T (°C)

j

typical value

0.0

0.5

1.0

1.5

2.0

-50

-25

0

25

I , I [T ] / I , I [T = 25 °C]

HL

j

H

L

j

50

75

100

125

150

T (°C)

j

I

H

I

L

Figure 7.

Surge peak on-state current vs

number of cycles

Figure 8.

Non repetitive surge peak on-state

current for a sinusoidal pulse

I

(A)

TMS

0

50

100

150

200

250

1

10

100

1000

One cycle

t = 20 ms

Number of cycles

Non Repetitive

T initial = 25 °C

j

Repetitive

T = 121 °C

C

I

(A), I²t (A²s)

TSM

10

100

1000

10000

0.01

0.10

1.00

10.00

width t < 10 ms, and corresponding value of I²t

p

t (ms)

Tj initial = 25 °C

I²t

I

TSM

dl/dt limitation: 50 A/µs

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