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MRF151G Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF151G
Description  N-CHANNEL BROADBAND RF POWER MOSFET
Download  6 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF151G Datasheet(HTML) 2 Page - Motorola, Inc

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MRF151G
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Each Side)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
125
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
1.0
µAdc
ON CHARACTERISTICS (Each Side)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
gfs
5.0
7.0
mhos
DYNAMIC CHARACTERISTICS (Each Side)
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
350
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
220
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
15
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Gps
14
16
dB
Drain Efficiency
(VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A)
η
50
55
%
Load Mismatch
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA,
VSWR 5:1 at all Phase Angles)
ψ
No Degradation in Output Power
Figure 1. 175 MHz Test Circuit
+
R1
C5
C4
C10
C9
BIAS 0 – 6 V
INPUT
D.U.T.
OUTPUT
+
T2
L1
C11
C1
T1
C12
50 V
L2
C1
R2
C2
C3
C6
C7
C8
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1
µF Chip
C6 — 330 pF Chip
C11 — 0.47
µF Ceramic Chip, Kemet 1215 or
C11 — Equivalent (100 V)
C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,
L1 — Close Wound, 1/4
″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5 – 2.0
µH Total Inductance
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.
T1 — 9:1 RF Transformer. Can be made of 15 – 18 Ohms
T1 — Semirigid Co–Ax, 62 – 90 Mils O.D.
T2 — 1:4 RF Transformer. Can be made of 16 – 18 Ohms
T2 — Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062
″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
εr = 5.0
NOTE: For stability, the input transformer T1 must be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
See Figure 6 for construction details of T1 and T2.


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