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MRF151G Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF151G
Description  N-CHANNEL BROADBAND RF POWER MOSFET
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF151G Datasheet(HTML) 1 Page - Motorola, Inc

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MRF151G
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
• Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
40
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
500
2.85
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.35
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF151G/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF151G
300 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375–04, STYLE 2
© Motorola, Inc. 1997
D
G
S
(FLANGE)
D
G
REV 8


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