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CGHV27200 Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV27200 Datasheet(HTML) 1 Page - Cree, Inc |
1 / 11 page 1 Subject to change without notice. www.cree.com/rf CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5- 2.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type: 440162 and 440161 PN: CGHV27200F and CGHV27200P Features • 2.5 - 2.7 GHz Operation • 16 dB Gain • -37 dBc ACLR at 50 W P AVE • 29 % Efficiency at 50 W P AVE • High Degree of DPD Correction Can be Applied Typical Performance Over 2.5 - 2.7 GHz (T C = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 47 dBm 15.0 16.0 16.0 dB ACLR @ 47 dBm -36.5 -37.5 -37.0 dBc Drain Efficiency @ 47 dBm 29.0 28.5 29.0 % Note: Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. PRELIMINARY |
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