Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

73113 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. 73113
Description  P-Channel 60-V (D-S) MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

73113 Datasheet(HTML) 2 Page - Vishay Siliconix

  73113 Datasheet HTML 1Page - Vishay Siliconix 73113 Datasheet HTML 2Page - Vishay Siliconix 73113 Datasheet HTML 3Page - Vishay Siliconix 73113 Datasheet HTML 4Page - Vishay Siliconix 73113 Datasheet HTML 5Page - Vishay Siliconix 73113 Datasheet HTML 6Page - Vishay Siliconix 73113 Datasheet HTML 7Page - Vishay Siliconix 73113 Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
www.vishay.com
2
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
Vishay Siliconix
Si7465DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
- 1
µA
VDS = - 60 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 25
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 5 A
0.051
0.064
Ω
VGS = - 4.5 V, ID = - 4.5 A
0.064
0.080
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 5 A
16
S
Diode Forward Voltagea
VSD
IS = - 2.9 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 30 V, VGS = - 10 V, ID = - 5 A
26
40
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
7.0
Gate Resistance
Rg
7.0
Ω
Turn-On Delay Time
td(on)
VDD = - 30 V, RL = 30 Ω
ID ≅ - 1.0 A, VGEN = –10 V, Rg = 6 Ω
815
ns
Rise Time
tr
915
Turn-Off Delay Time
td(off)
65
100
Fall Time
tf
30
45
Source-Drain Reverse Recovery Time
trr
IF = - 5 A, dI/dt = 100 A/µs
41
70
Output Characteristics
0
5
10
15
20
25
30
0
2468
10
VGS = 10 V thru 5 V
3 V
VDS - Drain-to-Source Voltage (V)
4 V
Transfer Characteristics
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 °C
TC= 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn