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73113 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. 73113
Description  P-Channel 60-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

73113 Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7465DP
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
Qg (Typ.)
- 60
0.064 at VGS = - 10 V
- 5
26
0.080 at VGS = - 4.5 V
- 4.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7465DP-T1-E3 (Lead (Pb)-free)
Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
- 60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150°C)
a
TA = 25 °C
ID
- 5
- 3.2
A
TA = 70 °C
- 4
- 2.6
Pulsed Drain Current
IDM
- 25
Continuous Source Current (Diode Conduction)a
IS
- 2.9
- 1.2
Avalanche Current
L = 0.1 mH
IAS
22
Single Pulse Avalanche Energy
EAS
24.2
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
3.5
1.5
W
TA = 70 °C
2.2
0.94
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 s
RthJA
27
36
°C/W
Steady State
60
85
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3.3
4.3


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