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RJH1CV5DPQ-E0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJH1CV5DPQ-E0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 10 page  R07DS0523EJ0700 Rev.7.00 Page 1 of 9 Jun 12, 2013 Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built-in fast recovery diode (t rr = 170 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline 1. Gate 2. Collector 3. Emitter 4. Collector C G E 1 2 3 4 RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 1200 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 50 A Tc = 100°C IC 25 A Collector peak current ic(peak) Note1 75 A Collector to emitter diode forward current IDF 25 A Collector to emitter diode forward peak current iDF(peak) Note1 75 A Collector dissipation PC Note2 245 W Junction to case thermal resistance (IGBT) θj-c Note2 0.51 °C/W Junction to case thermal resistance (Diode) θj-cd Note2 0.69 °C/W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C R07DS0523EJ0700 Rev.7.00 Jun 12, 2013 |
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