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RJH1CM6DPQ-E0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH1CM6DPQ-E0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page RJH1CM6DPQ-E0 Preliminary R07DS0521EJ0500 Rev.5.00 Page 2 of 9 Jun 24, 2013 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current / Diode reverse current ICES/IR — — 5 μA VCE = 1200 V, VGE = 0 Gate to emitter leak current IGES — — ±1 μA VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 4.5 — 6.5 V VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) — 2.1 2.7 V IC = 20 A, VGE = 15 V Note3 VCE(sat) — 2.8 — V IC = 40 A, VGE = 15 V Note3 Input capacitance Cies — 1600 — pF VCE = 25 V VGE = 0 f = 1 MHz Output capacitance Coes — 85 — pF Reveres transfer capacitance Cres — 45 — pF Total gate charge Qg — 105 — nC VGE = 15 V VCE = 300 V IC = 20 A Gate to emitter charge Qge — 17.5 — nC Gate to collector charge Qgc — 51 — nC Turn-on delay time td(on) — 45 — ns VCC = 600 V VGE = 15 V IC = 20 A Rg = 5 Ω Inductive load Rise time tr — 21 — ns Turn-off delay time td(off) — 120 — ns Fall time tf — 120 — ns Turn-on energy Eon — 1.8 — mJ Turn-off energy Eoff — 0.9 — mJ Total switching energy Etotal — 2.8 — mJ Short circuit withstand time tsc — 10 — μs VCC ≤ 720 V, VGE = 15 V Tc ≤ 125°C FRD forward voltage VF — 1.7 — V IF = 20 A Note3 FRD reverse recovery time trr — 180 — ns IF = 20 A diF/dt = 100 A/ μs FRD reverse recovery charge Qrr — 0.62 — μC FRD peak reverse recovery current Irr — 9.2 — A Notes: 3. Pulse test. |
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