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CSD95375Q4M Datasheet(PDF) 10 Page - Texas Instruments |
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CSD95375Q4M Datasheet(HTML) 10 Page - Texas Instruments |
10 / 18 page VO Vin PWM VDD VDD SKIP# PWM GND BST DRVH LL DRVL HSgate Vsw LSgate VIN VSW PGND A Gate Drive Current (IDD) V Gate Drive Voltage (VDD) V Input Voltage (VIN) V Averaged Switched Node Voltage (VSW_AVG) A Output Current (IOUT) Averaging Circuit Control FET Sync FET A Input Current (IIN) CSD95375Q4M LO Boot Boot_R CBoot Cin Co SKIP# CSD95375Q4M SLPS430 – JUNE 2013 www.ti.com APPLICATION INFORMATION The Power Stage CSD95375Q4M is a highly optimized design for synchronous buck applications using NexFET devices with a 5V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more systems centric environment. The high-performance gate driver IC integrated in the package helps minimize the parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such as Power Loss, Safe Operating Area and normalized graphs allow engineers to predict the product performance in the actual application. Power Loss Curves MOSFET centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 3 plots the power loss of the CSD95375Q4M as a function of load current. This curve is measured by configuring and running the CSD95375Q4M as it would be in the final application (see Figure 17). The measured power loss is the CSD95375Q4M device power loss which consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve. Power Loss = (VIN x IIN) + (VDD x IDD) – (VSW_AVG x IOUT) (1) The power loss curve in Figure 3 is measured at the maximum recommended junction temperature of TJ = 125°C under isothermal test conditions. Safe Operating Curves (SOA) The SOA curves in the CSD95375Q4M datasheet give engineers guidance on the temperature boundaries within an operating system by incorporating the thermal resistance and system power loss. Figure 5 and Figure 6 outline the temperature and airflow conditions required for a given load current. The area under the curve dictates the safe operating area. All the curves are based on measurements made on a PCB design with dimensions of 4.0" (W) x 3.5" (L) x 0.062" (T) and 6 copper layers of 1 oz. copper thickness. Normalized Curves The normalized curves in the CSD95375Q4M data sheet give engineers guidance on the Power Loss and SOA adjustments based on their application specific needs. These curves show how the power loss and SOA boundaries will adjust for a given set of systems conditions. The primary Y-axis is the normalized change in power loss and the secondary Y-axis is the change is system temperature required in order to comply with the SOA curve. The change in power loss is a multiplier for the Power Loss curve and the change in temperature is subtracted from the SOA curve. Figure 17. Power Loss Test Circuit 10 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated |
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