IRF7103TRPBF datasheet(1/10 Pages) IRF

Part #	IRF7103TRPBF

Description	adavanced process technology

Download	10 Pages

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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HEXFET® Power MOSFET

PD -95037B

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Adavanced Process Technology

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Ultra Low On-Resistance

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Dual N-Channel MOSFET

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Surface Mount

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Available in Tape & Reel

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Dynamic dv/dt Rating

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Fast Switching

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Lead-Free

Description

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7103PbF

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

VDSS = 50V

RDS(on) = 0.130Ω

ID = 3.0A

02/09/10

Parameter

Min.

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

Parameter

Max.

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

3.0

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

2.3

IDM

Pulsed Drain Current

10

PD @TA = 25°C

Power Dissipation

2.0

Linear Derating Factor

0.016

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

4.5

V/nS

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

Absolute Maximum Ratings

A

Thermal Resistance Ratings

W

°C

SO-8

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