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SI7469DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7469DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73438 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7469DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 80 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 79.6 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 80 V, VGS = 0 V - 1 µA VDS = - 80 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = - 10 V - 40 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 10.2 A 0.021 0.025 Ω VGS = - 4.5 V, ID = - 8.1 A 0.024 0.029 Forward Transconductancea gfs VDS = - 15 V, ID = - 10.2 A 52 S Dynamicb Input Capacitance Ciss VDS = - 40 V, VGS = 0 V, f = 1 MHz 4700 pF Output Capacitance Coss 320 Reverse Transfer Capacitance Crss 235 Total Gate Charge Qg VDS = - 40 V, VGS = - 10 V, ID = - 10.2 A 105 160 nC VDS = - 40 V, VGS = - 4.5 V, ID = - 10.2 A 55 85 Gate-Source Charge Qgs 16 Gate-Drain Charge Qgd 26 Gate Resistance Rg f = 1 MHz 4 Ω Turn-On Delay Time td(on) VDD = - 40 V, RL = 4.9 Ω ID ≅ - 8.1 A, VGEN = - 10 V, Rg = 1 Ω 45 70 ns Rise Time tr 220 330 Turn-Off Delay Time td(off) 95 145 Fall Time tf 110 165 Turn-On Delay Time td(on) VDD = - 40 V, RL = 4.9 Ω ID ≅ - 8.1 A, VGEN = - 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 25 40 Turn-Off Delay Time td(off) 105 160 Fall Time tf 100 150 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 28 A Pulse Diode Forward Currenta ISM - 40 Body Diode Voltage VSD IS = - 8.1 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 8.1 A, dI/dt = 100 A/µs, TJ = 25 °C 55 85 ns Body Diode Reverse Recovery Charge Qrr 110 165 nC Reverse Recovery Fall Time ta 37 ns Reverse Recovery Rise Time tb 18 |
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