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SI7469DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI7469DP
Description  P-Channel 80-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7469DP Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 73438
S09-0271-Rev. C, 16-Feb-09
Vishay Siliconix
Si7469DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 80
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 79.6
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 80 V, VGS = 0 V
- 1
µA
VDS = - 80 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = - 10 V
- 40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 10.2 A
0.021
0.025
Ω
VGS = - 4.5 V, ID = - 8.1 A
0.024
0.029
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 10.2 A
52
S
Dynamicb
Input Capacitance
Ciss
VDS = - 40 V, VGS = 0 V, f = 1 MHz
4700
pF
Output Capacitance
Coss
320
Reverse Transfer Capacitance
Crss
235
Total Gate Charge
Qg
VDS = - 40 V, VGS = - 10 V, ID = - 10.2 A
105
160
nC
VDS = - 40 V, VGS = - 4.5 V, ID = - 10.2 A
55
85
Gate-Source Charge
Qgs
16
Gate-Drain Charge
Qgd
26
Gate Resistance
Rg
f = 1 MHz
4
Ω
Turn-On Delay Time
td(on)
VDD = - 40 V, RL = 4.9 Ω
ID ≅ - 8.1 A, VGEN = - 10 V, Rg = 1 Ω
45
70
ns
Rise Time
tr
220
330
Turn-Off Delay Time
td(off)
95
145
Fall Time
tf
110
165
Turn-On Delay Time
td(on)
VDD = - 40 V, RL = 4.9 Ω
ID ≅ - 8.1 A, VGEN = - 4.5 V, Rg = 1 Ω
15
25
ns
Rise Time
tr
25
40
Turn-Off Delay Time
td(off)
105
160
Fall Time
tf
100
150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 28
A
Pulse Diode Forward Currenta
ISM
- 40
Body Diode Voltage
VSD
IS = - 8.1 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 8.1 A, dI/dt = 100 A/µs, TJ = 25 °C
55
85
ns
Body Diode Reverse Recovery Charge
Qrr
110
165
nC
Reverse Recovery Fall Time
ta
37
ns
Reverse Recovery Rise Time
tb
18


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