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ZTX658STOA Datasheet(PDF) 2 Page - Diodes Incorporated

Part No. ZTX658STOA
Description  NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX658STOA Datasheet(HTML) 2 Page - Diodes Incorporated

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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – APRIL 2002
FEATURES
*
400 Volt V
CEO
*
0.5 Amp continuous current
*P
tot=1 Watt
APPLICATIONS
*
Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
1A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
400
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO)
400
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off
Current
ICBO
100
nA
VCB=320V
Collector Cut-Off
Current
ICBO
100
nA
VCE=320V
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA
IC=50mA, IB=5mA*
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=100mA, IB=10mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.9
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
50
50
40
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
E-Line
TO92 Compatible
3-229
ZTX658
ZTX658
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Transition Frequency fT
50
MHz
IC=20mA, VCE=20V
f=20MHz
Output capcitance
Cobo
10
pF
VCB=20V, f=1MHz
Switching times
ton
toff
130
3300
ns
ns
IC=100mA, VC=100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
C
B
E
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
tem
perat
ure
0
D=1 (D.C.)
3-230


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