Electronic Components Datasheet Search |
|
FQI55N06 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
FQI55N06 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 25 50 75 100 125 150 175 0 10 20 30 40 50 60 T C, Case Temperature [ ℃] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ※ Notes : 1. V GS = 10 V 2. I D = 27.5 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t 1 PDM t 2 |
Similar Part No. - FQI55N06 |
|
Similar Description - FQI55N06 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |