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SI1303DL-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI1303DL-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 71075 S10-0110-Rev. F, 18-Jan-10 Vishay Siliconix Si1303DL Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -0.6 - 1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 5 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 2.5 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1 A 0.360 0.430 Ω VGS = - 3.6 V, ID = - 0.7 A 0.400 0.480 VGS = - 2.5 V, ID = - 0.3 A 0.560 0.700 Forward Transconductancea gfs VGS = - 10 V, ID = - 1 A 1.7 S Diode Forward Voltagea VSD IS = - 0.3 A, VGS = 0 V - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A 1.7 2.2 nC Gate-Source Charge Qgs 0.38 Gate-Drain Charge Qgd 0.63 Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 915 ns Rise Time tr 31 45 Turn-Off DelayTime td(off) 12.5 20 Fall Time tf 14 20 Source-Drain Reverse Recovery Time trr IF = - 1 A, dI/dt = 100 A/µs 35 55 Output Characteristics 0 1 2 3 4 5 6 0246 8 VGS = 4.5 V 2 V VDS - Drain-to-Source Voltage (V) 1 V, 1.5 V 2.5 V 3 V 3.5 V 4 V Transfer Characteristics 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TC = - 55 °C 125 °C 25°C VGS - Gate-to-Source Voltage (V) |
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