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PMEG6030EP Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMEG6030EP Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page PMEG6030EP_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 21 January 2010 2 of 13 NXP Semiconductors PMEG6030EP 3 A low VF MEGA Schottky barrier rectifier 2. Pinning information [1] The marking bar indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 12 sym001 12 Table 3. Ordering information Type number Package Name Description Version PMEG6030EP - plastic surface-mounted package; 2 leads SOD128 Table 4. Marking codes Type number Marking code PMEG6030EP AB Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 60 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 50 °C [1] - 3 A Tsp ≤ 135 °C - 3 A IFSM non-repetitive peak forward current square wave; tp = 8 ms [2] - 50 A Ptot total power dissipation Tamb ≤ 25 °C [3][4] - 625 mW [3][5] - 1050 mW [3][1] - 2100 mW |
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