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ICM7170IBGT Datasheet(PDF) 4 Page - Rochester Electronics |
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ICM7170IBGT Datasheet(HTML) 4 Page - Rochester Electronics |
4 / 14 page ICM7170 Specification Number ICM7170_IM (IL) REV - Page 4 of 14 3 Absolute Maximum Ratings TA = 25oC Thermal Information Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .500mW Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . .300oC Input Voltage (Any Terminal) (Note 2) . . . . VDD +0.3V to VSS -0.3V Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 50 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 75 N/A Maximum Junction Temperature Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. Due to the SCR structure inherent in the CMOS process, connecting any terminal at voltages greater than VDD or less than VSS may cause destructive device latchup. For this reason, it is recommended that no inputs from external sources not operating on the same power supply be applied to the device before its supply is established, and that in multiple supply systems, the supply to the ICM7170 be turned on first. Electrical Specifications TA = -40oC to 85oC, VDD +5V ±10%, VBACKUP VDD, VSS = 0V Unless Otherwise Specified All IDD specifications include all input and output leakages (ICM7170 and ICM7170A) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS VDD Supply Range, VDD fOSC = 32kHz 1.9 - 5.5 V fOSC = 1, 2, 4MHz 2.6 - 5.5 V Standby Current, ISTBY(1) fOSC = 32kHz Pins 1 - 8,15 - 22 and 24 = VDD ICM7170 - 1.2 20.0 µ A VDD = VSS; VBACKUP = VDD - 3.0V For ICM7170A See General Notes 5 ICM7170A - 1.2 5.0 µ A Standby Current, ISTBY(2) fOSC = 4MHz Pins 1 - 8,15 - 22 and 24 = VDD VDD = VSS; VBACKUP = VDD - 3.0V - 20 150 µ A Operating Supply Current, IDD(1) fOSC = 32kHz, Read/Write Operation at 100Hz - 0.3 1.2 mA Operating Supply Current, IDD(2) fOSC = 32kHz, Read/Write Operation at 1MHz - 1.0 2.0 mA Input Low Voltage (Except Osc.), VIL VDD = 5.0V - - 0.8 V Input High Voltage (Except Osc.), VIH VDD = 5.0V 2.4 - - V Output Low Voltage (Except Osc.), VOL IOL = 1.6mA - - 0.4 V Output High Voltage Except INTERRUPT (Except Osc.), VOH IOH = -400µA 2.4 - - V Input Leakage Current, IIL VIN = VDD or VSS -10 0.5 +10 µ A Three-State Leakage Current (D0 - D7), IOL(1) VO = VDD or VSS -10 0.5 +10 µ A Backup Battery Voltage, VBATTERY fOSC = 1, 2, 4MHz 2.6 - VDD - 1.3 V Backup Battery Voltage, VBATTERY fOSC = 32kHz 1.9 - VDD - 1.3 V Leakage Current INTERRUPT, IOL(2) VO = VDD INT SOURCE Connected to VSS - 0.5 10 µ A Capacitance D0 - D7, CI/O - 8 - pF Capacitance A0 - A4, CADDRESS - 6 - pF ICM7170 |
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