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IRLML2803GPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLML2803GPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRLML2803GPbF Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. VDSS = 30V RDS(on) = 0.25Ω HEXFET® Power MOSFET Description 12/13/11 l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l Halogen-Free Absolute Maximum Ratings Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation mW Linear Derating Factor mW/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy g mJ dv/dt Peak diode Recovery dv/dt d V/ns TJ ,TSTG Junction and Storage Temperature Range °C Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient f ––– 230 °C/W 3.9 A 5.0 540 4.3 ±20 Max. 1.2 0.93 7.3 -55 to + 150 www.irf.com 1 Micro3 ™ D S G 3 1 2 PD - 96164A |
Similar Part No. - IRLML2803GPBF_11 |
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Similar Description - IRLML2803GPBF_11 |
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