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FM24V01-G Datasheet(PDF) 1 Page - Cypress Semiconductor |
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FM24V01-G Datasheet(HTML) 1 Page - Cypress Semiconductor |
1 / 15 page This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-84459 Rev. *A Revised April 18, 2013 FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 10 year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface Up to 3.4 MHz maximum bus frequency Direct hardware replacement for EEPROM Supports legacy timing for 100 kHz & 400 kHz Device ID Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Operation Low Voltage Operation 2.0V – 3.6V Active Current 90 A (typ. @ 100KHz) Standby Current 80 A (typ.) Sleep Mode Current 4 A (typ.) Industry Standard Configuration Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC Package Description The FM24V01 is a 128Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V01 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24V01 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24V01 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The device is available in an industry standard 8-pin SOIC package using a familiar two-wire (I 2C) protocol. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device is guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration A0 A1 A2 VSS VDD WP SCL SDA 1 2 3 4 8 7 6 5 Pin Name Function A0-A2 Device Select Address SDA Serial Data/address SCL Serial Clock WP Write Protect VDD Supply Voltage VSS Ground |
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