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CY62157ELL-55BVXE Datasheet(PDF) 6 Page - Cypress Semiconductor |
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CY62157ELL-55BVXE Datasheet(HTML) 6 Page - Cypress Semiconductor |
6 / 18 page CY62157E MoBL® Document Number: 38-05695 Rev. *I Page 6 of 18 Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ [11] Max Unit VDR VCC for Data Retention 2 – – V ICCDR[12] Data Retention Current VCC = 2 V, CE1 > VCC – 0.2 V or CE2 < 0.2 V or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V Industrial – – 8 A Automotive – – 30 tCDR [13] Chip Deselect to Data Retention Time 0–– ns tR [14] Operation Recovery Time CY62157ELL-45 45 – – ns CY62157ELL-55 55 – – Data Retention Waveform Figure 4. Data Retention Waveform [15] VCC(min) tCDR VDR > 2 V DATA RETENTION MODE tR VCC(min) CE1 or VCC BHE.BLE CE2 or Notes 11. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 12. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating. 13. Tested initially and after any design or process changes that may affect these parameters. 14. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s. 15. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE. |
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