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CY62128ELL-45SXI Datasheet(PDF) 10 Page - Cypress Semiconductor |
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CY62128ELL-45SXI Datasheet(HTML) 10 Page - Cypress Semiconductor |
10 / 19 page CY62128E MoBL® Document Number: 38-05485 Rev. *K Page 10 of 19 Figure 9. Write Cycle No. 2 (CE1 or CE2 Controlled) [28, 29, 30, 31] Figure 10. Write Cycle No. 3 (WE Controlled, OE LOW) [28, 31] Switching Waveforms (continued) tWC DATA VALID tAW tSA tPWE tHA tHD tSD tSCE ADDRESS CE DATA I/O WE DATA VALID tHD tSD tLZWE tPWE tSA tHA tAW tSCE tWC tHZWE ADDRESS CE WE DATA I/O NOTE 32 Notes 28. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 29. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 30. Data I/O is high impedance if OE = VIH. 31. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 32. During this period, the I/Os are in output state and input signals must not be applied. |
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