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CY62128ELL-45SXI Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY62128ELL-45SXI
Description  1-Mbit (128 K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62128ELL-45SXI Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY62128E MoBL®
Document Number: 38-05485 Rev. *K
Page 10 of 19
Figure 9. Write Cycle No. 2 (CE1 or CE2 Controlled) [28, 29, 30, 31]
Figure 10. Write Cycle No. 3 (WE Controlled, OE LOW) [28, 31]
Switching Waveforms (continued)
tWC
DATA VALID
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
ADDRESS
CE
DATA I/O
WE
DATA VALID
tHD
tSD
tLZWE
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZWE
ADDRESS
CE
WE
DATA I/O
NOTE 32
Notes
28. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
29. The internal Write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can
terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
30. Data I/O is high impedance if OE = VIH.
31. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
32. During this period, the I/Os are in output state and input signals must not be applied.


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