STB120NF10T4 datasheet(5/21 Pages) STMICROELECTRONICS

Part #	STB120NF10T4

Description	N-channel 100 V, 0.009 廓, 110 A STripFET??II Power MOSFET in TO-247, TO-220, D짼PAK, TO-220FP

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB/F/PW120NF10

Electrical characteristics

Doc ID 9522 Rev 7

5/21

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=50 V, ID= 60 A,

RG=4.7 Ω, VGS=10 V

(see Figure 15)

-

25

90

132

68

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

110

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

440

A

VSD

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

ISD=120 A, VGS=0

-1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=120 A,

di/dt = 100 A/µs,

VDD=40 V, Tj=150 °C

(see Figure 20)

-

152

760

10

ns

nC

A

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