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AD8349AREZ Datasheet(PDF) 3 Page - Analog Devices |
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AD8349AREZ Datasheet(HTML) 3 Page - Analog Devices |
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3 / 28 page  Data Sheet AD8349 Rev. B | Page 3 of 28 SPECIFICATIONS VS = 5 V; ambient temperature (TA) = 25°C; LO = –6 dBm; I/Q inputs = 1.2 V p-p differential sine waves in quadrature on a 400 mV dc bias; baseband frequency = 1 MHz; LO source and RF output load impedances are 50 Ω, unless otherwise noted. Table 1. Parameter Conditions Min Typ Max Unit Operating Frequency 700 2700 MHz LO = 900 MHz Output Power 1.5 4 6 dBm Output P1 dB 7.6 dBm Carrier Feedthrough –45 –30 dBm Sideband Suppression –35 –31 dBc Third Harmonic1 POUT – (FLO + (3 × FBB)), POUT = 4 dBm –39 –36 dBc Output IP3 F1BB = 3 MHz, F2BB = 4 MHz, POUT = -4.2 dBm 21 dBm Quadrature Error 1.9 degree I/Q Amplitude Balance 0.1 dB Noise Floor 20 MHz offset from LO, all BB inputs 400 mV dc bias only –155 dBm/Hz 20 MHz offset from LO, BB inputs = 1.2 V p-p differential on 400 mV dc –150 dBm/Hz GSM Sideband Noise LO = 884.8 MHz, 6 MHz offset from LO, POUT = 2 dBm –152 dBc/Hz LO = 1900 MHz Output Power 0 3.8 6 dBm Output P1dB 6.8 dBm Carrier Feedthrough –38 dBm Sideband Suppression –40 –36 dBc Third Harmonic 1 POUT – (FLO + (3 × FBB)), POUT = 3.8 dBm –37 –36 dBc Output IP3 F1BB = 3 MHz, F2BB = 4 MHz, POUT = –4.5 dBm 22 dBm Quadrature Error 0.7 degree I/Q Amplitude Balance 0.1 dB Noise Floor 20 MHz offset from LO, all BB inputs 400 mV dc bias only –156 dBm/Hz 20 MHz offset from LO, BB inputs = 1.2 V p-p differential on 400 mV dc –150 dBm/Hz GSM Sideband Noise LO = 1960 MHz, 6 MHz offset from LO, POUT = 2 dBm –151 dBc/Hz LO = 2140 MHz Output Power –2 2.4 5.1 dBm Output P1dB 5.6 dBm Carrier Feedthrough –42 –30 dBm Sideband Suppression –43 –36 dBc Third Harmonic 1 POUT – (FLO + (3 × FBB)), POUT = 2.4 dBm –37 –36 dBc Output IP3 F1BB = 3 MHz, F2BB = 4 MHz, POUT = –6.5 dBm 19 dBm Quadrature Error 0.3 degree I/Q Amplitude Balance 0.1 dB Noise Floor 20 MHz offset from LO, all BB inputs 400 mV dc bias only –156 dBm/Hz 20 MHz offset from LO, BB inputs = 1.2 V p-p differential on 400 mV dc –151 dBm/Hz WCDMA Noise Floor LO = 2140 MHz. 30 MHz offset from LO, PCHAN = –17.3 dBm –156 dBm/Hz LO INPUTS Pins LOIP and LOIN LO Drive Level Characterization performed at typical level –10 –6 0 dBm Nominal Impedance 50 Ω Input Return Loss Drive via 1:1 balun, LO = 2140 MHz –8.6 dB BASEBAND INPUTS Pins IBBP, IBBN, QBBP, QBBN I and Q Input Bias Level 400 mV Input Bias Current 11 µA Input Offset Current 1.8 µA Bandwidth (0.1 dB) LO = 1500 MHz, baseband input = 600 mV p-p sine wave on 400 mV dc 10 MHz LO = 1500 MHz, baseband input = 60 mV p-p sine wave on 400 mV dc 24 MHz |
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