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CY7C1352G-133AXC Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY7C1352G-133AXC Datasheet(HTML) 5 Page - Cypress Semiconductor |
5 / 21 page CY7C1352G Document Number: 38-05514 Rev. *L Page 5 of 21 Pin Definitions Name I/O Description A0, A1, A Input- synchronous Address inputs used to select one of the 256 K address location. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. BW[A:B] Input- synchronous Byte write inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. WE Input- synchronous Write enable input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD Input- synchronous Advance/load input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK Input-clock Clock input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 Input- synchronous Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. CE2 Input- synchronous Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 Input- synchronous Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. OE Input- asynchronous Output enable, asynchronous input, active LOW. Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the DQ pins are allowed to behave as outputs. When deasserted HIGH, DQ pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. CEN Input- synchronous Clock enable input, active LOW. When asserted LOW the clock signal is recognized by the SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. ZZ[2] Input- asynchronous ZZ “sleep” Input. This active HIGH input places the device in a non-time-critical “sleep” condition with data integrity preserved. During normal operation, this pin has to be low or left floating. ZZ pin has an internal pull-down. DQs I/O- synchronous Bidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the address during the clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQs and DQP[A:B] are placed in a tri-state condition. The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. DQP[A:B] I/O- synchronous Bidirectional data parity I/O lines. Functionally, these signals are identical to DQs. During write sequences, DQP[A:B] is controlled by BW[A:B] correspondingly. MODE Input strap pin Mode input. Selects the burst order of the device. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. VDD Power supply Power supply inputs to the core of the device. VDDQ I/O power supply Power supply for the I/O circuitry. VSS Ground Ground for the device. NC – No Connects. Not internally connected to the die. Note 2. Errata: The ZZ pin (Pin 64) needs to be externally connected to ground. For more information, see "Errata" on page 18. |
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