©2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltage (V) and currents (A) are negative polarity for PNP transistors

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.

Symbol

Parameter

FPN660

FPN660A

Units

Collector-Emitter Voltage

60

60

V

Collector-Base Voltage

80

60

V

Emitter-Base Voltage

5

5

V

Collector Current

- Continuous

3

3

A

Operating and Storage Junction Temperature Range

-55 ~ +150

-55 ~ +150

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage

55

V

Collector-Base Breakdown Voltage

FPN660

FPN660A

80

60

V

V

Emitter-Base Breakdown Voltage

5.0

V

Collector-Base Cutoff Current

100

10

nA

µA

Emitter-Base Cutoff Current

100

nA

On Characteristics *

DC Current Gain

FPN660

FPN660A

70

100

250

80

40

300

550

Collector-Emitter Saturation Voltage

FPN660

FPN660A

300

450

400

mV

mV

mV

Base-Emitter Saturation Voltage

1.25

V

Base-Emitter On Voltage

1.0

V

Small Signal Characteristics

Output Capacitance

45

pF

Transition Frequency

f = 100MHz

75

MHz

FPN660/FPN660A

PNP Low Saturation Transistor

• These devices are designed for high current gain and low saturation

voltage with collector currents up to 3.0A continuous.

• Sourced from process PA.

C

B

E

TO-226