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FPAL20SL60 Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part No. FPAL20SL60
Description  Smart Power Module (SPM)
Download  17 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FPAL20SL60 Datasheet(HTML) 6 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
Absolute Maximum Ratings
Thermal Resistance
Note
2. For the measurement point of case temperature (Tc), please refer to Fig. 4.
Electrical Characteristics
Inverter Part (T
j = 25°C, Unless Otherwise Specified)
Note
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 5.
Item
Symbol
Condition
Min. Typ.
Max.
Unit
Junction to Case Thermal
Resistance
Rth(j-c)Q Each IGBT under Inverter Operating Condition
(Note 2)
-
-
2.49
°C/W
Rth(j-c)F
Each FWDi under Inverter Operating Condition
(Note 2)
--
3.4
°C/W
Contact Thermal
Resistance
Rth(c-f)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied
-
-
0.06
°C/W
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Collector - emitter
Saturation Voltage
VCE(SAT) VCC = VBS = 15V
VIN = 0V
IC = 20A, Tj = 25°C
-
-
2.3
V
IC = 20A, Tj = 125°C
-
-
2.4
V
FWDi Forward Voltage
VFM
VIN = 5V
IC = 20A, Tj = 25°C
-
-
2.5
V
IC = 20A, Tj = 125°C
-
-
2.3
V
Switching Times
tON
VPN = 300V, VCC = VBS = 15V
IC = 20A, Tj = 25°C
VIN = 5V ↔ 0V, Inductive Load
(High-Low Side)
(Note 3)
-0.39
-
us
tC(ON)
-0.15
-
us
tOFF
-1.1
-
us
tC(OFF)
-0.65
-
us
trr
-0.1
-
us
Collector - emitter
Leakage Current
ICES
VCE = VCES, Tj = 25°C
-
-
250
uA


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