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2012.01 - Rev.D

ROHM : VMT3

2SC5658

2SC2412K

2SC4617

ROHM :

EMT3

EIAJ : SC-75A

JEDEC : SOT-416

Abbreviated symbol: B*

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

2SC4081

Abbreviated symbol: B*

Abbreviated symbol: B*

(1) Base

(2) Emitter

(3) Collector

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346

Abbreviated symbol: B*

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

0.3Min.

2.8

1.6

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

1.25

2.1

0.1Min.

(1) Emitter

(2) Base

(3) Collector

0.1Min.

1.6

0.8

(2)

(3)

(1)

(3)

1.2

0.8

0.2

0.15Max.

0.2

(2)

(1)

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Features

Dimensions (Unit : mm)

1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)

2. Complements the 2SA1037AK / 2SA1576A /

2SA1774H / 2SA2029.

Structure

Epitaxial planar type

NPN silicon transistor

Absolute maximum (Ta=25

C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Parameter

Tj

Tstg

60

V

V

V

A

W

°C

°C

50

7

0.15

0.2

0.15

2SC2412K, 2SC4081

2SC4617, 2SC5658

150

−55 to +150

Symbol

Limits

Unit

Electrical characteristics (Ta=25

C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Parameter

Symbol

Cob

Min.

60

50

7

−

−

120

−

−

−

−

−

−

−

−

−

−

180

2

−

−

−

0.1

0.1

390

0.4

−

3.5

μA

μA

−2mA, f=100MHz

V

V

μA

μA

−

V

MHz

pF

Typ.

Max.

Unit

Conditions

Transition frequency