FMBA14 datasheet(2/3 Pages) FAIRCHILD

Part #	FMBA14

Description	NPN Multi-Chip Darlington Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

V(BR)CES

Collector-Emitter Breakdown Voltage

IC = 100

µA, IB = 0

30

V

ICBO

Collector-Cutoff Current

VCB = 30 V, IE = 0

100

nA

IEBO

Emitter-Cutoff Current

VEB = 10 V, IC = 0

100

nA

ON CHARACTERISTICS*

hFE

DC Current Gain

IC = 10 mA, VCE = 5.0 V

IC = 100 mA, VCE = 5.0 V

10K

20K

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 100 mA, IB = 0.1 mA

1.5

V

VBE(on)

Base-Emitter On Voltage

IC = 100 mA, VCE = 5.0 V

2.0

V

SMALL SIGNAL CHARACTERISTICS

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

fT

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 10 V,

f = 100 MHz

200

MHz

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

0.001

0.01

0.1

1

0

50

100

150

200

250

I - COLLECTOR CURRENT (A)

C

25 °C

125 °C

- 40 °C

V

= 5V

CE

Collector-Emitter Saturation

Voltage vs Collector Current

1

10

100

1000

0

0.4

0.8

1.2

1.6

I - COLLECTOR CURRENT (mA)

C

25°C

- 40 ºC

125 ºC

β = 1000

Base-Emitter Saturation

Voltage vs Collector Current

1

10

100

1000

0

0.4

0.8

1.2

1.6

2

I - COLLECTOR CURRENT (mA)

C

25 °C

- 40 ºC

125 ºC

β = 1000

Base Emitter ON Voltage vs

Collector Current

1

10

100

1000

0

0.4

0.8

1.2

1.6

2

I - COLLECTOR CURRENT (mA)

C

V = 5V

CE

- 40 ºC

25 °C

125 ºC

NPN Multi-Chip Darlington Transistor

(continued)

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