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STGWS38IH130D Datasheet(PDF) 4 Page - STMicroelectronics |
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STGWS38IH130D Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGW38IH130D, STGWT38IH130D 4/17 Doc ID 15697 Rev 4 2 Electrical characteristics TJ= 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 1300 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 20 A VGE= 15 V, IC= 20 A, TJ =125 °C 2.1 2.0 2.8 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 1 mA 3.75 5.75 V ICES Collector-cut-off current (VGE = 0) VCE =1300 V VCE =1300 V, TJ=125 °C 1 10 mA mA IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V ± 100 nA gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 25 V, IC= 20 A 20 S VF Diode forward voltage IF = 20 A IF = 20 A, TJ = 125 °C 1.3 1.9 1.7 V V Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE=0 - 2900 155 30 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 960 V, IC= 20 A,VGE=15 V - 127 18 50 - nC nC nC Table 6. Inductive load switching times Symbol Parameter Test conditions Min. Typ. Max. Unit tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 16) - 102 284 180 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 16) - 200 424 316 - ns ns ns |
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