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STP16N65M5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP16N65M5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page October 2011 Doc ID 18146 Rev 2 1/19 19 STB16N65M5 STD16N65M5 N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK Features ■ DPAK worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Type VDSS @ TJmax RDS(on) max. ID STB16N65M5 710 V < 0.279 Ω 12 A STD16N65M5 DPAK D²PAK 1 3 TAB 1 3 TAB Table 1. Device summary Order codes Marking Package Packaging STB16N65M5 16N65M5 D²PAK Tape and reel STD16N65M5 DPAK www.st.com |
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