©2002 Fairchild Semiconductor Corporation

FM2G200US60 Rev. A1

IGBT

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Symbol

Description

FM2G200US60

Units

Collector-Emitter Voltage

600

V

Gate-Emitter Voltage

± 20

V

Collector Current

200

A

Pulsed Collector Current

400

A

Diode Continuous Forward Current

200

A

Diode Maximum Forward Current

400

A

Short Circuit Withstand Time

us

MaximumPowerDissipation

830

W

Operating Junction Temperature

-40 to +150

°C

Storage Temperature Range

-40 to +125

°C

Isolation Voltage

@ AC 1minute

2500

V

Mounting

Torque

Power Terminals Screw: M5

2.0

N.m

Mounting Screw: M6

2.5

N.m

FM2G200US60

Molding Type Module

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power

modules provide low conduction and switching losses as

well as short circuit ruggedness. They are designed for

applications such as motor control, uninterrupted power

supplies (UPS) and general inverters where short circuit

ruggedness is a required feature.

Features

• UL Certified No. E209204

• High cpeed cwitching

• High input impedance

• Fast and soft anti-parallel FWD

Application

• AC & DC motor controls

• General purpose inverters

• Robotics

• Servo controls

•UPS

Internal Circuit Diagram

C1

E2

G1

E1

G2

E2

E1/C2

Package Code : 7PM-BB