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FM2G200US60 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FM2G200US60 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2002 Fairchild Semiconductor Corporation FM2G200US60 Rev. A1 Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 200A TC = 25°C -- 1.9 2.8 V TC = 100°C -- 1.8 -- trr Diode Reverse Recovery Time IF = 200A di / dt = 400 A/us TC = 25°C -- 90 130 ns TC = 100°C -- 130 -- Irr Diode Peak Reverse Recovery Current TC = 25°C -- 19 25 A TC = 100°C -- 25 -- Qrr Diode Reverse Recovery Charge TC = 25°C -- 855 1600 nC TC = 100°C -- 1625 -- Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.15 °C/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.35 °C/W RθCS Case-to-Sink (Conductive grease applied) 0.03 -- °C/W Weight Weight of Module -- 270 g |
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