IXTP102N15T datasheet(1/7 Pages) IXYS

Part #	IXTP102N15T

Description	Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

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G = Gate

D

= Drain

S = Source

TAB = Drain

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

V

DSS

= 150V

I

D25

= 102A

R

DS(on) ≤

≤≤≤≤ 18m

Ω

DS99661B(10/08)

IXTA102N15T

IXTH102N15T

IXTP102N15T

IXTQ102N15T

TO-263 (I

XTA)

TO-220 (I

XTP)

D

(TAB)

G

S

TO-3P (IXTQ)

G

D

S

TO-247 (IXTH)

G

S

(TAB)

G

D

S

(TAB)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

150

V

DGR

T

J

= 25

°C to 175°C R

GS = 1MΩ

150

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

102

A

I

LRMS

Lead Current Limit, RMS

75

A

I

DM

T

C = 25°C, pulse width limited by TJM

300

A

I

A

T

C = 25°C51

A

E

AS

T

C = 25°C

750

mJ

dV/dt

I

S ≤ IDM, VDD ≤ VDSS ,TJ ≤ 175°C

10

V/ns

P

D

T

C = 25°C

455

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting Torque

(TO-220, TO-3P, TO-247)

1.13 / 10

Nmlb.in.

F

C

Mounting Force

(TO-263)

10..65/2.2..14.6

N/lb.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-3P

5.5

g

TO-247

6.0

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

150

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 150°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

18 m

Ω

Features

International standard packages

Avalanche rated

Advantages

Easy to mount

Space savings

High power density

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor drives

Uninterruptible power supplies

High speed power switching

applications

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