IXTA16N50P datasheet(1/4 Pages) IXYS

Part #	IXTA16N50P

Description	PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C16

A

I

DM

T

C = 25°C, pulse width limited by TJM

48

A

I

AR

T

C = 25°C16

A

E

AR

T

C = 25°C25

mJ

E

AS

T

C = 25°C

750

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 10 Ω

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-220, TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-263

3

g

TO-3P

5.5

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99323E(03/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

500

V

GS(th)

V

DS

= V

GS, ID = 250μA

3.0

5.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±10

nA

I

DSS

V

DS

= V

DSS

5

μA

V

GS = 0 V

T

J = 125°C

100

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

400 m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

G

S

(TAB)

IXTA 16N50P

IXTP 16N50P

IXTQ 16N50P

V

DSS

= 500

V

I

D25

=

16

A

R

DS(on)

≤≤≤≤≤ 400 mΩ

Ω

TO-3P (IXTQ)

G

D

S

(TAB)

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