IXTK 150N15P

IXTQ 150N15P

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

55

80

S

C

iss

5800

pF

C

oss

V

1730

pF

C

rss

400

pF

t

d(on)

30

ns

t

r

V

33

ns

t

d(off)

R

100

ns

t

f

28

ns

Q

g(on)

190

nC

Q

gs

V

40

nC

Q

gd

105

nC

R

thJC

0.21

° C/W

R

thCK

TO-3P

0.21

° C/W

R

thCS

TO-264

0.15

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

150

A

I

SM

Repetitive

340

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

150

ns

-di/dt = 100 A/

µs

Q

RM

V

2.3

µC

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

TO-3P (IXTQ) Outline

TO-264 (IXTK) Outline