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PZT2907AT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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PZT2907AT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page PZT2907AT1, SPZT2907AT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO −60 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector−Base Cutoff Current (VCB = −50 Vdc, IE = 0) ICBO − − −10 nAdc Collector−Emitter Cutoff Current (VCE = −30 Vdc, VBE = 0.5 Vdc) ICEX − − −50 nAdc Base−Emitter Cutoff Current (VCE = −30 Vdc, VBE = −0.5 Vdc) IBEX − − −50 nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) hFE 75 100 100 100 50 − − − − − − − − 300 − − Collector-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = − 500 mAdc, IB = −50 mAdc) VCE(sat) − − − − −0.4 −1.6 Vdc Base-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − − − −1.3 −2.6 Vdc DYNAMIC CHARACTERISTICS Current-Gain − Bandwidth Product (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) fT 200 − − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cc − − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Ce − − 30 pF SWITCHING TIMES Turn-On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) ton − − 45 ns Delay Time td − − 10 Rise Time tr − − 40 Turn-Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) toff − − 100 ns Storage Time ts − − 80 Fall Time tf − − 30 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. |
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