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PMEG4050ETP Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG4050ETP Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page PMEG4050ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 10 October 2011 3 of 13 NXP Semiconductors PMEG4050ETP 40 V, 5 A low VF MEGA Schottky barrier rectifier 5. Limiting values [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj =25°C - 40 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz; Tamb ≤ 15 °C [1] -5 A square wave; δ = 0.5; f = 20 kHz; Tsp ≤ 155 °C -5 A IFSM non-repetitive peak forward current square wave; tp =8ms; Tj(init) =25°C - 70 A Ptot total power dissipation Tamb ≤ 25 °C [2][3] - 750 mW [4][3] - 1250 mW [1][3] - 2500 mW Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2][3] - - 200 K/W [1][4][3] - - 120 K/W [1][5][3] --60 K/W Rth(j-sp) thermal resistance from junction to solder point [6] --12 K/W |
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