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LMV2011 Datasheet(PDF) 1 Page - Texas Instruments

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Part # LMV2011
Description  LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LMV2011 Datasheet(HTML) 1 Page - Texas Instruments

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N/C
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VOUT
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LMV2011
www.ti.com
SNOSA32C – AUGUST 2003 – REVISED MARCH 2013
LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier
Check for Samples: LMV2011
1
FEATURES
DESCRIPTION
The LMV2011 is a new precision amplifier that offers
2
(For Vs = 5V, Typical Unless Otherwise Noted)
unprecedented accuracy and stability at an affordable
Low Ensured Vos Over Temperature 35µV
price and is offered in a miniature (5-pin SOT-23)
Low Noise with no 1/f 35nV/
√Hz
package and in an 8-lead SOIC package. This device
utilizes
patented
techniques
to
measure
and
High CMRR 130dB
continually correct the input offset error voltage. The
High PSRR 120dB
result is an amplifier which is ultra stable over time
High AVOL 130dB
and temperature. It has excellent CMRR and PSRR
ratings, and does not exhibit the familiar 1/f voltage
Wide Gain-Bandwidth Product 3MHz
and current noise increase that plagues traditional
High Slew Rate 4V/µs
amplifiers.
The
combination
of
the
LMV2011
Low Supply Current 930µA
characteristics makes it a good choice for transducer
amplifiers, high gain configurations, ADC buffer
Rail-to-Rail Output 30mV
amplifiers, DAC I-V conversion, and any other 2.7V-
No External Capacitors Required
5V application requiring precision and long term
stability.
APPLICATIONS
Other useful benefits of the LMV2011 are rail-to-rail
Precision Instrumentation Amplifiers
output, a low supply current of 930µA, and wide gain-
Thermocouple Amplifiers
bandwidth
product
of
3MHz.
These
extremely
versatile features found in the LMV2011 provide high
Strain Gauge Bridge Amplifier
performance and ease of use.
Connection Diagrams
Figure 1. 5-Pin SOT-23 (Top View)
Figure 2. 8-Pin SOIC (Top View)
See DBV Package
See D Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2003–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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