Electronic Components Datasheet Search |
|
LMV2011 Datasheet(PDF) 1 Page - Texas Instruments |
|
|
LMV2011 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 24 page V + 1 2 3 4 5 6 7 8 N/C VIN - VIN + V - N/C VOUT N/C - + LMV2011 www.ti.com SNOSA32C – AUGUST 2003 – REVISED MARCH 2013 LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier Check for Samples: LMV2011 1 FEATURES DESCRIPTION The LMV2011 is a new precision amplifier that offers 2 • (For Vs = 5V, Typical Unless Otherwise Noted) unprecedented accuracy and stability at an affordable • Low Ensured Vos Over Temperature 35µV price and is offered in a miniature (5-pin SOT-23) • Low Noise with no 1/f 35nV/ √Hz package and in an 8-lead SOIC package. This device utilizes patented techniques to measure and • High CMRR 130dB continually correct the input offset error voltage. The • High PSRR 120dB result is an amplifier which is ultra stable over time • High AVOL 130dB and temperature. It has excellent CMRR and PSRR ratings, and does not exhibit the familiar 1/f voltage • Wide Gain-Bandwidth Product 3MHz and current noise increase that plagues traditional • High Slew Rate 4V/µs amplifiers. The combination of the LMV2011 • Low Supply Current 930µA characteristics makes it a good choice for transducer amplifiers, high gain configurations, ADC buffer • Rail-to-Rail Output 30mV amplifiers, DAC I-V conversion, and any other 2.7V- • No External Capacitors Required 5V application requiring precision and long term stability. APPLICATIONS Other useful benefits of the LMV2011 are rail-to-rail • Precision Instrumentation Amplifiers output, a low supply current of 930µA, and wide gain- • Thermocouple Amplifiers bandwidth product of 3MHz. These extremely versatile features found in the LMV2011 provide high • Strain Gauge Bridge Amplifier performance and ease of use. Connection Diagrams Figure 1. 5-Pin SOT-23 (Top View) Figure 2. 8-Pin SOIC (Top View) See DBV Package See D Package These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2003–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Similar Part No. - LMV2011 |
|
Similar Description - LMV2011 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |