NCP4687DH18T1G datasheet(4/18 Pages) ONSEMI

Part #	NCP4687DH18T1G

Description	500 mA, High PSRR, LDO Linear Voltage Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP4687

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ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at

TA = +25°C.

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Operating Input Voltage

VOUT ≤ 1.5 V

VIN

2.5

5.25

V

VOUT > 1.5 V

VOUT + 1

5.25

Output Voltage

Ta = 25°C, VOUT > 1.8 V

VOUT

x0.992

x1.008

V

−40°C < Ta < 85°C, VOUT > 1.8 V

x0.985

x1.015

V

Ta = 25°C, VOUT ≤ 1.8 V

−18

+18

mV

−40°C < Ta < 85°C, VOUT ≤ 1.8 V

−55

+55

mV

Output Voltage Temp.

Coefficient

−40°C < Ta < 85°C, VOUT > 1.8 V

±30

ppm/°C

−40°C < Ta < 85°C, VOUT ≤ 1.8 V

±100

Load Regulation

1 mA < IOUT ≤ 500 mA

LoadReg

1

20

mV

Line Regulation

Set VOUT + 0.5 V < VIN < 5.25 V

LineReg

0.02

0.1

%/V

Dropout Voltage

IOUT = 500 mA

0.7 V ≤ VOUT < 0.8 V

VDO

0.58

0.88

V

0.8 V ≤ VOUT < 0.9 V

0.52

0.80

0.9 V ≤ VOUT < 1.0 V

0.45

0.70

1.0 V ≤ VOUT < 1.2 V

0.42

0.64

1.2 V ≤ VOUT < 1.4 V

0.35

0.53

1.4 V ≤ VOUT < 1.8 V

0.31

0.48

1.8 V ≤ VOUT < 2.1 V

0.27

0.41

2.1 V ≤ VOUT < 2.5 V

0.25

0.38

2.5 V ≤ VOUT < 3.0 V

0.23

0.34

3.0 V ≤ VOUT < 3.6 V

0.22

0.32

Output Current

IOUT

500

mA

Short Current Limit

VOUT = 0 V

ISC

50

mA

Quiescent Current

IOUT = 0 mA

VOUT > 1.5 V

IQ

80

115

mA

VOUT ≤ 1.5 V

75

Standby Current

VIN = VIN max, VCE = 0 V

ISTB

0.1

1.0

mA

CE Pin Pull−Down Current

IPD

0.3

0.6

mA

CE Pin Threshold Voltage

CE Input Voltage “H”

VCEH

1.0

VIN

V

CE Input Voltage “L”

VCEL

0.4

Power Supply Rejection

Ratio

VOUT ≤ 2.0 V @ VIN = 3.0 V,

VOUT > 2.0 V @ VIN =

= Set VOUT + 1.0 V,

DVIN_PK−PK = 0.2 V,

IOUT = 30 mA

f = 1 kHz

PSRR

75

dB

f = 10 kHz

70

Output Noise Voltage

IOUT = 30 mA , f = 10 Hz to 100 kHz, VOUT > 1.8 V

VNOISE

20 x

VOUT

mVrms

IOUT = 30 mA, f = 10 Hz to 100 kHz, VOUT ≤ 1.8 V

40 x

VOUT

Thermal Shutdown /

Hysteresis

165/65

°C

Auto−discharge N−MOS

Resistance

VIN = 4.0 V, VCE = 0.0 V (Note 2)

RDS(on)

60

W

2.

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