DS92LV16

SNLS138H – JANUARY 2001 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

−0.3V to +4V

LVCMOS/LVTTL Input Voltage

LVCMOS/LVTTL Output Voltage

Bus LVDS Receiver Input Voltage

−0.3V to +3.9V

Bus LVDS Driver Output Voltage

−0.3V to +3.9V

Bus LVDS Output Short Circuit Duration

10ms

Junction Temperature

+150°C

Storage Temperature

−65°C to +150°C

Lead Temperature (Soldering, 4 seconds)

+260°C

Maximum Package Power Dissipation Capacity

23.2 mW/°C above

Package Derating:

LQFP

+25°C

43°C/W

11.1°C/W

ESD Rating (HBM)

>2.5kV

(1)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that

the devices should be operated at these limits. The table of ELECTRICAL CHARACTERISTICS specifies conditions of device operation.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

RECOMMENDED OPERATING CONDITIONS

Min

Nom

Max

Units

3.15

3.3

3.45

V

−40

+25

+85

°C

Clock Rate

25

80

MHz

2

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