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SI2305DS-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI2305DS-T1-E3
Description  P-Channel 1.25-W, 1.8-V (G-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2305DS-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si2305DS
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
www.vishay.com
1
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFETs: 1.8 V Rated
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
- 8
0.052 at VGS = - 4.5 V
± 3.5
0.071 at VGS = - 2.5 V
± 3
0.108 at VGS = - 1.8 V
± 2
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2305DS (A5)*
* Marking Code
Ordering Information: Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)
Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface Mounted on FR4 board.
b. t
≤ 5 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 8
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
± 3.5
A
TA = 70 °C
± 2.8
Pulsed Drain Current
IDM
± 12
Continuous Source Current (Diode Conduction)a, b
IS
- 1.6
Maximum Power Dissipationa, b
TA = 25 °C
PD
1.25
W
TA = 70 °C
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 5 s
RthJA
100
°C/W
Steady State
130


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