Data Sheet

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© 2012 ROHM Co., Ltd. All rights reserved.

Schottky Barrier Diode

RB088B150

lApplications

lExternal Dimensions

(Unit : mm)

lLand Size Figure

(Unit : mm)

Switching power supply

lFeatures

1)Cathode common dual type

2)Low IR

3)High reliability

4)AEC-Q101 qualified

lConstruction

Silicon epitaxial

lStructure

lTaping Dimensions

(Unit : mm)

lAbsolute Maximum Ratings

(Ta=25°C)

Symbol

Unit

V

V

Io

A

A

Tj

°C

Tstg

°C

(*2) Per Diode.

lElectrical Characteristics

(Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

0.78

0.88

V

Reverse current

-

-

15

m

A

Limits

150

10

150

Parameter

Reverse voltage (DC)

Average rectified forward current (*1)

Reverse voltage (repetitive)

Conditions

50

Parameter

Junction temperature

Storage temperature

150

(*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave

-

55 to +150

Forward current surge peak (60Hz・1cyc)(*2)

6.8±0.1

8.0±0.1

4.0±0.1

2.0±0.05

φ 1.55±0.1

　　　　　 0

2.7±0.2

φ 3.0±0.1

0.4±0.1

8.0±0.1

TL

1

ROHM : CPD

Manufacture

JEITA : SC-63

6.5±0.2

5.1±0.2

0.1

C0.5

2.3±0.2

2.3±0.2

0.9

0.75

0.65±0.1

(1)

(2)

(3)

0.5±0.1

1.0±0.2

0.5±0.1

2.3±0.2

0.1

1

CPD

1.6

2.3

1.6

2.3

6.0

1/4

2012.08 - Rev.A