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BR93H86RFVM-2C Datasheet(PDF) 3 Page - Rohm |
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BR93H86RFVM-2C Datasheet(HTML) 3 Page - Rohm |
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BR93H86-2C 3/29 Datasheet Datasheet www.rohm.com 19.DEC.2012 Rev.002 TSZ02201-0R1R0G100050-1-2 © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 DC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V) Parameter Symbol Limit Unit Conditions Min Typ Max Input Low Voltage VIL -0.3 - 0.3xVCC V Input High Voltage VIH 0.7xVCC - VCC+0.3 V Output Low Voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V Output Low Voltage 2 VOL2 0 - 0.2 V IOL=100μA Output High Voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V Output High Voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA Input Leak Current ILI -10 - 10 μA VIN=0V to VCC Output Leak Current ILO -10 - 10 μA VOUT=0V to VCC, CS=0V Supply Current ICC1 - - 3.0 mA fSK=2MHz, tE/W=4ms (WRITE) ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 3.0 mA fSK=2MHz, tE/W=4ms (WRAL) Standby Current ISB - - 10 μA CS=0V, DO=OPEN ◎Radiation resistance design is not made. AC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V) Parameter Symbol Min Typ Max Unit SK Frequency fSK - - 2 MHz SK “H” Time tSKH 200 - - ns SK “L” Time tSKL 200 - - ns CS “L” Time tCS 200 - - ns CS Setup Time tCSS 50 - - ns DI Setup Time tDIS 50 - - ns CS Hold Time tCSH 0 - - ns DI Hold Time tDIH 50 - - ns Data “1” Output Delay Time tPD1 - - 200 ns Data “0” Output Delay Time tPD0 - - 200 ns Time from CS to Output establishment tSV - - 150 ns Time from CS to High-Z tDF - - 150 ns Write Cycle Time tE/W - - 4 ms |
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