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BR93H86RFVM-2C Datasheet(PDF) 2 Page - Rohm |
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BR93H86RFVM-2C Datasheet(HTML) 2 Page - Rohm |
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BR93H86-2C 2/29 Datasheet Datasheet www.rohm.com 19.DEC.2012 Rev.002 TSZ02201-0R1R0G100050-1-2 © 2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Limit Unit Supply Voltage VCC -0.3 to +6.5 V Permissible Dissipation Pd 380 (MSOP8) (1) mW 410 (TSSOP-B8) (2) 560 (SOP8) (3) 560 (SOP-J8) (4) Storage Temperature Range Tstg -65 to +150 ℃ Operating Temperature Range Topr -40 to +125 ℃ Input Voltage/Output Voltage ‐ -0.3 to VCC+0.3 V When using at Ta=25℃ or higher, 3.1mW(*1), 3.3mW(*2) , 4.5mW(*3,*4),to be reduced per 1℃. Memory Cell Characteristics (VCC=2.5V to 5.5V) Parameter Limit Unit Conditions Min Typ Max Write Cycles (5) 1,000,000 - - Cycles Ta≦85℃ 500,000 - - Cycles Ta≦105℃ 300,000 - - Cycles Ta≦125℃ Data Retention (5) 100 - - Years Ta≦25℃ 60 - - Years Ta≦105℃ 50 - - Years Ta≦125℃ (5) Not 100% TESTED Recommended Operating Conditions Parameter Symbol Limit Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage VIN 0 to VCC |
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