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FGH40N6S2D Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part # FGH40N6S2D
Description  600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGH40N6S2D Datasheet(HTML) 6 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves T
J = 25°C unless otherwise noted
0.5
1.0
1.5
2.5
VEC, FORWARD VOLTAGE (V)
02.0
0
10
25oC
125oC
50
30
3.5
3.0
20
25
5
15
35
40
45
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%
IEC, FORWARD CURRENT (A)
25oC trr
dIEC/dt = 200A/µs, VCE = 390V
25oC tb
25oC ta
125oC trr
125oC tb
125oC ta
0
100
150
50
250
200
6
8
10
12
20
14
24
18
16
25oC tb
125oC tb
125oC ta
25oC ta
IEC = 20A, VCE = 390V
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
50
0
75
100
150
200
25
1000
200
400
900
500
700
125
175
300
600
800
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
125oC, IEC = 20A
125oC, IEC = 10A
25oC, IEC = 10A
25oC, IEC = 20A
1000
200
400
900
500
700
300
600
800
300
100
400
500
700
900
200
600
800
VCE = 390V
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
0
4
3
6
5
VCE = 390V, TJ = 125
oC
2
1
1000
200
400
900
500
700
300
600
800
IEC = 20A
IEC = 10A
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
IEC = 20A
IEC = 10A
1000
200
400
900
500
700
300
600
800
VCE = 390V, TJ = 125
oC
12
10
14
6
18
16
8
20


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