STW57N65M5 datasheet(5/22 Pages) STMICROELECTRONICS

Part #	STW57N65M5

Description	N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5

Electrical characteristics

Doc ID 022849 Rev 4

5/22

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(V)

tr(V)

tf(i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 28 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

-

73

15

12

19

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

42

168

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 42 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 42 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 19)

-

418

8

40

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 42 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 19)

-

528

12

44

ns

µC

A

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